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| SEMICONDUCTOR TECHNICAL DATA VHF/UHF WIDE BAND AMPLIFIER APPLICATION. KTC3790S EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Noise Figure, High Gain. NF=1.2dB, |S21e| =13dB (f=1GHz). D 2 L E B L 2 A G H 1 3 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 20 10 1.5 65 150 150 -55 150 UNIT P P V V V mA mW C N J DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 K M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking h FE Rank Lot No. Type Name R ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Reverse Transfer Capacitance Transition Frequency Insertion Gain Noise Figure SYMBOL ICBO IEBO hFE (Note1) Cre fT |S21e|2 NF TEST CONDITION VCB=10V, IE=0 VEB=1V, IC=0 VCE=8V, IC=20mA VCB=10V, IE=0, f=1MHz (Note2) VCE=8V, IC=20mA VCE=8V, IC=20mA, f=1GHz VCE=8V, IC=7mA, f=1GHz MIN. 50 11 TYP. 0.35 9 13 1.2 MAX. 1 1 250 0.9 2.5 pF GHz dB dB UNIT A A Note 1 : hFE Classification L:50~100, M:80~160, N:125~250. Note 2 : Cre is measured by 3 terminal method with capacitance bridge. 2007. 8. 22 Revision No : 0 1/5 KTC3790S TYPICAL CHARACTERISTICS REVERSE TRANSFER CAPACITANCE Cre (pF) hFE - IC 300 Cre - VCB 3 2 DC CURRENT GAIN hFE 200 100 70 50 30 VCE=8V Ta=25 C 1 0.5 f =1.0MHz Ta=25 C 10 0.5 1 5 10 50 0.1 1 5 10 20 30 COLLECTOR CURRENT IC (mA) COLLECTOR-BASE VOLTAGE VCB (V) f T - IC TRANSITION FREQUENCY fT (GHz) 2 INSERTION GAIN S21e (dB) 30 20 10 5 15 S21e 2 - IC 10 5 VCE = 8V f = 1.0GHz Ta=25 C VCE=8V Ta=25 C 1 1 5 10 20 30 0 0.5 1 5 10 50 70 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 2 S21e 20 -f 7 NF - I C NOISE FIGURE NF (dB) VCE = 8V f = 1.0GHz Ta=25 C (dB) INSERTION GAIN S21e VCE=8V IC=20mA 16 Ta=25 C 6 5 4 3 2 1 2 12 8 4 0 0.1 S21e 2 0.5 1.0 2.0 3.0 0 0.5 1 5 10 50 70 FREQUENCY f (GHz) COLLECTOR CURRENT IC (mA) 2007. 8. 22 Revision No : 0 2/5 KTC3790S Pc - Ta COLLECTOR POWER DISSIPATION PC (mW) 200 100 0 0 50 100 150 AMBIENT TEMPERATURE Ta ( C) S-PARAMETER (VCE = 8V, IC = 5mA, ZO=50 Frequency MHz 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. 0.728 0.490 0.343 0.253 0.202 0.176 0.176 0.179 0.186 0.211 S11 Ta = 25 ) S21 S21 Ang. Mag. Ang. Mag. S22 Ang. Ang. -45.3 -74.5 -93.2 -110.1 -131.1 -148.9 -162.8 173.9 163.3 151.1 Mag. 12.107 8.097 6.260 4.623 4.004 3.250 3.021 2.575 2.520 2.183 ) S21 138.7 114.2 102.3 90.1 83.6 75.8 69.4 63.4 58.9 53.4 0.036 0.065 0.079 0.090 0.101 0.125 0.144 0.160 0.188 0.202 66.2 61.6 61.6 61.2 61.3 60.8 60.0 59.8 59.1 58.9 0.825 0.675 0.582 0.529 0.500 0.470 0.448 0.427 0.406 0.386 -21.6 -26.6 -29.0 -28.6 -30.1 -31.4 -33.4 -34.8 -37.5 -44.5 (VCE = 8V, IC = 20mA, ZO=50 Frequency MHz 200 400 600 800 1000 1200 1400 1600 1800 2000 Mag. S11 Ta = 25 S21 Ang. Mag. Ang. Mag. S22 Ang. Ang. Mag. 0.366 0.194 0.124 0.077 0.063 0.065 0.074 0.108 0.116 0.134 -66.8 -88.9 -104.3 -132.0 -156.4 179.5 168.0 147.0 137.6 131.2 19.757 10.502 7.591 5.446 4.653 3.754 3.460 2.934 2.870 2.479 116.9 98.8 91.1 82.0 77.6 71.6 66.5 61.9 58.2 53.4 0.033 0.055 0.072 0.095 0.107 0.135 0.164 0.178 0.205 0.221 62.6 70.6 74.6 73.2 72.1 72.1 70.1 69.6 66.3 64.0 0.587 0.485 0.453 0.419 0.413 0.392 0.369 0.347 0.333 0.312 -22.5 -23.8 -24.3 -23.2 -24.2 -26.4 -29.9 -32.2 -34.3 -42.1 2007. 8. 22 Revision No : 0 3/5 KTC3790S S11e VCE =8V I C =5mA Ta=25 C (UNIT : ) S12e VCE =8V I C =5mA Ta=25 C j50 120 90 60 2GHz j25 j100 j150 150 30 j10 2GHz j250 f=0.2GHz 100 50 250 0 10 25 _ + 180 0.24 0 0.061 0.12 0.18 0 -j10 f=0.2GHz -j250 -j150 -j25 -j100 -120 -j50 -90 -60 -150 -30 S21e VCE =8V I C =5mA Ta=25 C 120 90 60 S22e VCE =8V I C =5mA Ta=25 C (UNIT : ) j25 30 j50 j100 j150 150 f=0.2GHz j10 j250 _ + 180 0 2GHz 3.6 7.3 11 15 0 0 10 25 50 100 250 f=0.2GHz -j10 -150 -30 -j25 -120 -90 -60 -j50 2GHz -j250 -j150 -j100 2007. 8. 22 Revision No : 0 4/5 KTC3790S S11e VCE =8V I C =20mA Ta=25 C (UNIT : ) S12e VCE =8V I C =20mA Ta=25 C j50 120 90 60 2GHz j25 j100 j150 150 30 j10 2GHz j250 f=0.2GHz 0.066 0 10 25 50 100 250 _ + 180 0.27 0.13 0.2 0 0 -j10 f=0.2GHz -j250 -j150 -150 -30 -j25 -j100 -120 -j50 -90 -60 S21e VCE =8V I C =20mA Ta=25 C 120 f=0.2GHz 90 60 S22e VCE =8V I C =20mA Ta=25 C (UNIT : ) j25 j50 j100 j150 150 30 j10 j250 _ + 180 2GHz 0 5.9 12 18 24 0 0 10 25 50 2GHz 100 250 f=0.2GHz -j10 -30 -j25 -120 -90 -60 -j50 -j100 -j250 -j150 -150 2007. 8. 22 Revision No : 0 5/5 |
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